54 nm 1 Gbit DDR3 cut down the use of ability
Hynix semiconductor Limited Company Have already released the second generation of 1 Gbit DDR3 (use process technology of 54 nanometers) of it . New 1 Gbit DDR3 in x4 (H5TQ1G43TFR) Li are offered And x8 (H5TQ1G83TFR) Organization. The design of the apparatus revises the consumption that the previous generation reduces the apparatus.
It was the same as a kind of Gbit DDR3 products existing that such new products were operated in 1.5 V power, but it has reduced the consumption by 30% on a existing one. It is the highest carrying out the memory in a Gbit density kind in industry. It is 87% of the market of memory according to the research company iSuppli of the market, 1 Gbit DDR3 keeps. ISuppli estimates the high density memory will take more than 50% market by 2011.
Have friendly products of this kind of environment of the characteristic of reducing the consumption through the introduction, Hynix expects in order to the user’s needs react to feature lower level of the consumption correctly. Virtualized application very like data centre, server, supercomputer and application moving require longer battery life to utilize this kind of product to make the reduction of the consumption become possible.
The 2nd generation of 1 Gbit DDR3 is being adopted for design philosophy, use quilt for the the next design which breaks the blue spare part which include 2 Gbit DDR3 together with technology of 40 nanometers of classes.
In masses’ volume, this kind of product is being produced now.
